JPH0348656B2 - - Google Patents
Info
- Publication number
- JPH0348656B2 JPH0348656B2 JP57075831A JP7583182A JPH0348656B2 JP H0348656 B2 JPH0348656 B2 JP H0348656B2 JP 57075831 A JP57075831 A JP 57075831A JP 7583182 A JP7583182 A JP 7583182A JP H0348656 B2 JPH0348656 B2 JP H0348656B2
- Authority
- JP
- Japan
- Prior art keywords
- recess
- semiconductor
- film
- oxide film
- thermal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 238000002955 isolation Methods 0.000 description 21
- 238000001020 plasma etching Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075831A JPS58192346A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075831A JPS58192346A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58192346A JPS58192346A (ja) | 1983-11-09 |
| JPH0348656B2 true JPH0348656B2 (en]) | 1991-07-25 |
Family
ID=13587521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57075831A Granted JPS58192346A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58192346A (en]) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2547954B1 (fr) * | 1983-06-21 | 1985-10-25 | Efcis | Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice |
| JPS60107844A (ja) * | 1983-11-16 | 1985-06-13 | Nippon Precision Saakitsutsu Kk | 半導体装置の製造方法 |
| JPH0669064B2 (ja) * | 1984-03-23 | 1994-08-31 | 日本電気株式会社 | 半導体装置の素子分離方法 |
| US4528047A (en) * | 1984-06-25 | 1985-07-09 | International Business Machines Corporation | Method for forming a void free isolation structure utilizing etch and refill techniques |
| US4526631A (en) * | 1984-06-25 | 1985-07-02 | International Business Machines Corporation | Method for forming a void free isolation pattern utilizing etch and refill techniques |
| JPS6122645A (ja) * | 1984-06-26 | 1986-01-31 | Nec Corp | 半導体デバイス用基板およびその製造方法 |
| JPS61128555A (ja) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | 半導体装置 |
| US4556585A (en) * | 1985-01-28 | 1985-12-03 | International Business Machines Corporation | Vertically isolated complementary transistors |
| JPH079974B2 (ja) * | 1985-10-15 | 1995-02-01 | 日本電気株式会社 | 相補型半導体装置の製造方法 |
| US4929570A (en) * | 1986-10-06 | 1990-05-29 | National Semiconductor Corporation | Selective epitaxy BiCMOS process |
| KR880005690A (ko) * | 1986-10-06 | 1988-06-30 | 넬손 스톤 | 선택적인 에피켁샬층을 사용한 BiCMOS 제조방법 |
| NL8801981A (nl) * | 1988-08-09 | 1990-03-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPH0282551A (ja) * | 1988-09-19 | 1990-03-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US5250461A (en) * | 1991-05-17 | 1993-10-05 | Delco Electronics Corporation | Method for dielectrically isolating integrated circuits using doped oxide sidewalls |
| KR100485170B1 (ko) * | 2002-12-05 | 2005-04-22 | 동부아남반도체 주식회사 | 반도체 소자 및 이의 제조 방법 |
-
1982
- 1982-05-06 JP JP57075831A patent/JPS58192346A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58192346A (ja) | 1983-11-09 |
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